Vertical fet process with controlled gate length and self-aligned junctions

ABSTRACT

Method and structure of forming a vertical FET. The method includes depositing a bottom source-drain layer over a substrate; depositing a first heterostructure layer over the bottom source-drain layer; depositing a channel layer over the first heterostructure layer; depositing a second heterostructure layer over the channel layer; forming a first fin having a hard mask; recessing the first and the second heterostructure layers to narrow them; filling gaps with an inner spacer; laterally trimming the channel layer to a narrower width; depositing a bottom outer spacer over the bottom source-drain layer; depositing a high-k layer on the bottom outer spacer, the first fin, and the hard mask; and depositing a metal gate layer over the high-k and top outer spacer to produce the vertical FET. Forming another structure by recessing the metal gate layer below the second inner spacer.

FIELD OF THE INVENTION

The present invention relates to an improved vertical field-effecttransistor (FET) process. More particularly, the present inventionrelates to an improved vertical FET process with controlled gate lengthand self-aligned junctions.

BACKGROUND

FETs are transistors that use an electrical field to control theelectrical behavior of the device. The fin refers in a semiconductormaterial patterned on a substrate that often has exposed surfaces thatform the narrow channel between source and drain region layers. VerticalFETs often include a vertical channel and active source and drain regionlayers arranged beneath and above the channel. A thin dielectric layerarranged over the fin separates the fin channel from the gate. Like inany transistors, there is a strong need to solve both gate lengthcontrol and junction position control problems in vertical FETs. In theconventional lateral FinFET transistors, gate length is defined bylithography or sidewall image transfer process. However, in the verticalFET architecture where the channel direction (transport direction) isarranged vertically on the substrate, none of the conventional methodsused to define gate length is applicable. The gate spacer thickness andthe source-drain extension thickness are also difficult to control inthe vertical architecture. It is critical to control them because theirthicknesses are closely related to junction positions.

SUMMARY

The present invention provides a method of forming a verticalfield-effect transistor (FET), the method includes: depositing a highlydoped bottom source-drain layer over a substrate of a first type;depositing a first heterostructure layer over the highly doped bottomsource-drain layer; depositing a channel layer over the firstheterostructure layer; depositing a second heterostructure layer overthe channel layer; forming a first fin having a hard mask there on,wherein the hard mask is disposed on the second heterostructure layer;recessing the first and the second heterostructure layers such that theyare narrower than the first fin and the hard mask; filling gaps formedby the recessed first and second heterostructure layers with adielectric inner spacer; laterally trimming the channel layer to anarrower width of from about 3 to about 10 nm and ranges there between;depositing a dielectric bottom outer spacer over the bottom source-drainlayer; depositing a high-k dielectric layer on the bottom outer spacer,the first fin, and the hard mask; and depositing a metal gate layer ontop of the high-k dielectric layer and the bottom outer spacer;depositing top outer spacer; and forming a top source-drain epitaxiallayer to produce the vertical FET. Those who are skilled in the field ofsemiconductor device can realize that the gate length in such formedvertical transistors is defined by the thickness of channel layer formedby epitaxial growth on blanket wafers. And it is known that suchthickness can be very precisely controlled. The physical length of thegate metal is equal or very close to the channel layer thickness minustwice the thickness of the high-k. Those who are skilled could alsorealize that the use of inner spacer structures is critical because theyassist in defining gate length and the junction positions.

The present invention also provides a vertical field-effect transistor(FET) structure, which includes: a substrate of a first type; a highlydoped bottom source-drain layer disposed on the substrate of the firsttype; a dielectric bottom outer spacer disposed on the highly dopedbottom source-drain layer; a recessed first heterostructure layerdisposed on the highly doped bottom source-drain; a channel layerdisposed on the recessed first heterostructure layer; a recessed secondheterostructure layer disposed on the channel layer; a first dielectricinner spacer disposed between the dielectric bottom outer spacer and therecessed first heterostructure; a fin including the recessed first andthe second heterostructure layers and the channel layer; a high-kdielectric layer disposed on the bottom outer spacer and the channellayer; dielectric top outer spacer disposed on top of the high-kdielectric and a metal gate layer; a second dielectric inner spacerdisposed between the dielectric top outer spacer and the recessed secondheterostructure; and a top source-drain epitaxial layer of a second typedisposed on the first fin and the dielectric top inner spacer and thedielectric top outer spacer resulting in the vertical FET.

The present invention also provides another vertical field-effecttransistor (FET) structure, which includes: a substrate of a first type;a highly doped bottom source-drain layer disposed on the substrate ofthe first type; a dielectric bottom outer spacer disposed on the highlydoped bottom source-drain layer; a recessed first heterostructure layerdisposed on the highly doped bottom source-drain; a channel layerdisposed on the recessed first heterostructure layer; a recessed secondheterostructure layer disposed on the channel layer; a first dielectricinner spacer disposed between the dielectric bottom outer spacer and therecessed first heterostructure; a fin including the recessed first andthe second heterostructure layers and the channel layer; a high-kdielectric layer disposed on the bottom outer spacer and the channellayer; a dielectric top outer spacer disposed on top of the high-kdielectric; a second dielectric inner spacer disposed between thedielectric top outer spacer and the recessed second heterostructure; ametal gate layer directionally recessed below the second dielectricinner spacer; and a top source-drain epitaxial layer of a second typedisposed on the first fin and the dielectric top inner spacer and thedielectric top outer spacer resulting in the vertical FET.

It is to be noted that the sequence of the process steps described aboveand in the claims below may not follow the exact sequence as described.For example, the highly doped bottom source-drain layer may not beformed at the beginning of the process. It may be formed after the finstructure is formed. For another example, the high-k and metal gate maybe formed after both top and bottom source-drain's are formed, whichwould be in consistence with the well-known replacement metal gate (RMG)process scheme. But in any of the embodiments, the gate length isdefined by making use of the multi-layer structure including the firstheterostructure layer, the channel layer and the second heterostructure.The inner spacers are formed in the multi-layer fins by filling the gapscreated by selectively recessing heterostructures. The channel layer islaterally etched to a narrow width in certain downstream process steps.

BRIEF DESCRIPTION OF THE DRAWINGS

Embodiments will be described in more detail in conjunction with theaccompanying drawings, in which:

FIG. 1 illustrates a diagram of depositing a highly doped bottomsource-drain layer over a substrate of a first type; depositing a firstheterostructure layer over the highly doped bottom source-drain layer;depositing a channel layer over the first heterostructure layer; anddepositing a second heterostructure layer over the channel layer;

FIG. 2 illustrates a diagram of forming a hard mask disposed on thesecond heterostructure layer;

FIG. 3 illustrates a diagram of etching a first fin using a reactive ionetching (RIE) process;

FIG. 4 illustrates a diagram of recessing the first heterostructurelayer and the second heterostructure layer such that they are narrowerthan the first fin and the hard mask;

FIG. 5 illustrates a diagram of filling gaps formed by recessing thefirst heterostructure layer and the second heterostructure layer with adielectric inner spacer;

FIG. 6 illustrates a diagram of depositing a dielectric bottom outerspacer over the highly doped bottom source-drain layer;

FIG. 7 illustrates a diagram of laterally trimming the channel layer toa narrower width of from about 3 to about 10 nm and ranges therebetween;

FIG. 8 illustrates a diagram of depositing a high-k dielectric layer onthe bottom outer spacer, the first fin and the hard mask;

FIG. 9 illustrates a diagram of depositing a metal gate layer on top ofthe high-k dielectric layer and the dielectric bottom outer spacer;

FIG. 10 illustrates a diagram wherein interlayer dielectric (ILD) oxideis formed over the dielectric bottom outer spacer and chemical metalpolishing (CMP) is performed on top of the hard mask;

FIG. 11 illustrates a diagram wherein the metal gate layer is etchedbelow the top of hard mask using a RIE process;

FIG. 12 illustrates a diagram wherein the exposed high-k dielectric isremoved from below the top of the hard mask;

FIG. 13 illustrates a diagram wherein a dielectric top outer spacer isformed after removing the exposed high-k dielectric;

FIG. 14 illustrates a diagram wherein the hard mask is removed and therecessed second heterostructure is also removed;

FIG. 15 illustrates a diagram wherein a top source-drain epitaxial layerof a second type is grown on the fin;

FIG. 16 illustrates a diagram wherein a first contact on the topsource-drain epitaxial layer and a second contact on the bottomsource-drain layer is formed to complete the final transistor; and

FIG. 17 illustrate a diagram of another embodiment where the metal gatelayer is directionally recessed below the second dielectric innerspacer.

DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS

The present invention provides a method which relates to an improvedvertical FET process with controlled gate length and self-alignedjunctions and a structure of fabricating such a device. The presentinvention is described in greater detail by referring to the followingdiscussion and drawings that accompany the present disclosure.

It will be readily understood that components of the present invention,as generally described in the figures herein, can be arranged anddesigned in a wide variety of different configurations in addition tothe presently described preferred embodiments. Thus, the followingdetailed description of some embodiments of the present invention, asrepresented in the figures, is not intended to limit the scope of thepresent invention as claimed, but is merely representative of selectedpresently preferred embodiments of the present invention.

For the sake of brevity, conventional techniques related tosemiconductor device and IC fabrication may not be described in detailherein. Moreover, the various tasks and process steps described hereinmay be incorporated into a more comprehensive procedure or processhaving additional steps or functionality not described in detail herein.In particular, various steps in the manufacture of semiconductor devicesand semiconductor-based ICs are well known and so, in the interest ofbrevity, many conventional steps will only be mentioned briefly hereinor will be omitted entirely without providing the well-known processdetails.

In general, the various processes used to form a micro-chip that will bepackaged into an IC fall into four general categories, namely, filmdeposition, removal/etching, semiconductor doping andpatterning/lithography. Deposition is any process that grows, coats, orotherwise transfers a material onto the wafer. Available technologiesinclude physical vapor deposition (PVD), chemical vapor deposition(CVD), electrochemical deposition (ECD), molecular beam epitaxy (MBE)and more recently, and atomic layer deposition (ALD) among others.Deposition also includes a so-called epitaxial growth process whichdeposits single crystalline material on a single crystalline substrate.

Removal/etching is any process that removes material from the wafer.Examples include etch processes (either wet or dry), andchemical-mechanical planarization (CMP), and the like. A dry etchprocess such as reactive ion etching (RIE) uses chemically reactiveplasma to remove a material, such as a masked pattern of semiconductormaterial, by exposing the material to a bombardment of ions thatdislodge portions of the material from the exposed surface. The plasmais generated under low pressure (vacuum) by an electromagnetic field.

Semiconductor doping is the modification of electrical properties bydoping, for example, transistor sources and drains, generally bydiffusion and/or by ion implantation. These doping processes arefollowed by furnace annealing or rapid thermal annealing. Annealingserves to activate the implanted dopants. Selective doping of variouslayers of the semiconductor substrate allows the conductivity of thesubstrate to be changed with the application of voltage. By creatingstructures of these various components, millions of transistors can bebuilt and wired together to form the complex circuitry of a modernmicroelectronic device.

Semiconductor lithography is the formation of three-dimensional reliefimages or patterns on the semiconductor substrate for subsequenttransfer of the pattern to the substrate. In semiconductor lithography,the patterns are formed by a light sensitive polymer called aphoto-resist. To build the complex structures that make up a transistorand the many wires that connect the millions of transistors of acircuit, lithography and etch pattern transfer steps are repeatedmultiple times. Each pattern being printed on the wafer is aligned tothe previously formed patterns and slowly the conductors, insulators andselectively doped regions are built up to form the final device.

The metal gate layer is electrically insulated from the mainsemiconductor n-channel or p-channel by a thin layer insulatingmaterial, for example, silicon dioxide or high dielectric constant(high-k) dielectrics, which makes the input resistance of the transistorrelatively high.

The present invention is to be understood within the context of thedescription provided below. The description provided below is to beunderstood within the context of the Figures provided and describedabove. The Figures are intended for illustrative purposes and, as such,are not necessarily drawn to scale.

FIG. 1 illustrates a diagram of depositing a highly doped bottomsource-drain 203 layer over a substrate of a first type 204, depositinga first heterostructure layer 200 over the highly doped bottomsource-drain layer 203, depositing a channel layer 202 over the firstheterostructure layer 200, and depositing a second heterostructure layer201 over the channel layer 202. The bottom source-drain 203 can besilicon or silicon germanium. The first heterostructure layer 200 andsecond heterostructure layer 201 can either be the same or differentmaterials. The material used for heterostructure layers can be silicongermanium. The heterostructure layer can have a thickness from about 4to about 10 nm and ranges there between and the thickness of the firstand second heterostructure layers can be the same or different. Thechannel layer 202 can have a thickness from about 10 to about 50 nm andranges there between. The material used for the channel layer can besilicon. The highly doped bottom source-drain layer 203 can have athickness of about 30 to about 50 nm and ranges there between.

FIG. 2 illustrates a diagram of forming a hard mask 205 disposed on thesecond heterostructure. The hard mask can be silicon nitride.Alternatively, the hard mask 205 can contain multiple materials arrangedin any forms, including but not limited to silicon nitride, polysilicon,amorphous silicon, and silicon oxide. The hard mask 205 can have alateral width from about 5 to about 25 nm and ranges there between. FIG.3 illustrates a diagram of etching to form a first fin 300 using areactive ion etching (RIE) process. FIG. 4 illustrates a diagram ofrecessing the first heterostructure layer 200 and the secondheterostructure layer 201 such that they are narrower than the first fin300 and the hard mask 205.

FIG. 5 illustrates a diagram of filling gaps formed by the firstheterostructure layer 200 and the second heterostructure layer 201 witha dielectric inner spacer 206. This can be done by first conformallydepositing inner spacer material to pinch off the gap and thenconformally etching back that material on the unwanted surfaces. Theetching time can be controlled such that the material filled in the gapremains. The dielectric inner spacer 206 can be a material such assilicon-boron-carbon-nitride (SiBCN) or silicon nitride or SiCO orSiOCN. The shape of the inner spacer may not be perfectly rectangular asshown in the figures. The interface between dielectric inner spacer 206and the recessed first heterostructure layer 200 and recessed secondheterostructure layer 201 may have a convex shape towards the recessedheterostructure layers due to the nature of recess etching. The gatelength is determined by the channel layer 202 epitaxial thickness, whichis supposed to be well-controlled. As will be clear later in thedescription, the dielectric inner spacer structure will become part ofthe gate spacer, and the recessed heterostructures or the regionsoccupied by the recessed heterostructure will later become thesource-drain extension regions. It's clear that the thickness of thedielectric inner spacer and the thickness of the source-drain extensionare the same as or very close to the thickness of the heterostructuresgrown on blanket wafers at the beginning of the process. Therefore, allthose thicknesses can be well controlled.

FIG. 6 illustrates a diagram of depositing a dielectric bottom outerspacer 207 over the highly doped bottom source-drain layer 203.Different dielectric materials such as silicon-boron-carbon-nitride(SiBCN) or silicon nitride or SiCO or SiOCN can be used. The dielectricbottom outer spacer 207 can have a thickness of about 5 to about 15 nmand ranges there between.

FIG. 7 illustrates a diagram of laterally trimming the channel layer 202to reach a narrower width of from 3 to about 10 nm and ranges therebetween. The purpose of lateral trimming is to make the deposited gatemetal confined by the top and bottom dielectric inner spacers 206, andalso to make the channel have a comparable width as the width of therecessed first heterostructure layer 200 and second heterostructurelayer 201. The channel layer 202 is thinned down to target a specificthickness. This can be done by using oxidation process or wet etchprocess or conformal dry etch process.

FIG. 8 illustrates a diagram of depositing a high-k dielectric layer 208on the bottom outer spacer 207, the first fin 300 and the hard mask 205.FIG. 9 illustrates a diagram of depositing a metal gate layer 209 on topof the high-k dielectric layer 208 and the dielectric bottom outerspacer 207. FIG. 10 illustrates a diagram wherein interlayer dielectric(ILD) oxide 210 is formed over the dielectric bottom outer spacer 207and chemical metal polishing (CMP) is performed on top of the hard mask205.

FIG. 11 illustrates a diagram wherein the metal gate layer 209 is etchedbelow the top of hard mask 205 using a RIE process. Where the RIEprocess stops is less critical because the gate length is determined bythe dielectric inner spacer 206. Even if the metal gate layer 209 isetched below the dielectric inner spacer 206, it would not affect thegate length. FIG. 12 illustrates a diagram wherein the exposed high-kdielectric 208 is removed from below the top of the hard mask 205.

FIG. 13 illustrates a diagram wherein a dielectric top outer spacer 211is formed after removing the exposed high-k dielectric 208. FIG. 14illustrates a diagram wherein the hard mask 205 is removed and therecessed second heterostructure 201 is also removed. Note that theremoval of this second heterostructure is optional. If the secondheterostructure is not removed, it will remain in the final devicestructure acting as the top source-drain extension materials. FIG. 15illustrates a diagram wherein a top source-drain epitaxial layer 212 ofa second type is grown from the exposed channel layer 202, and locatedon the dielectric top outer spacer 211 and dielectric the inner spacer206. If the dielectric heterostructure is not removed in FIG. 14, thetop source-drain epitaxial layer 212 can start to grow from the secondheterostructure layer 201. The top source-drain epitaxial layer 212 canbe silicon or silicon germanium. It is clear on FIG. 15 that the gatelength is defined by the channel layer 202 thickness and the physicalmetal gate length is equal or very close to channel layer thicknessminus twice the high-k thickness. It is also evident from FIG. 15 howthe dielectric inner spacers 206 help define gate length. The dielectricinner spacer 206, as part of the gate spacer, directly contacts thesource-drain extension regions.

FIG. 16 illustrates a diagram a first contact 213 on the topsource-drain epitaxial layer 212 and a second contact 214 on the bottomsource-drain layer 203 is formed to complete the final transistor 215.The gate contact is located out of the paper surface and therefore notshown.

FIG. 17 illustrate another embodiment where the metal gate layer 209 isdirectionally recessed below the second dielectric inner spacer 206.Because metal gate layer 209 is still tucked underneath the top innerspacer, the physical gate length is not affected.

What is claimed is:
 1. A vertical field-effect transistor (FET)structure comprising: a substrate of a first type; a highly doped bottomsource-drain layer disposed on the substrate of the first type; adielectric bottom outer spacer disposed on the highly doped bottomsource-drain layer; a recessed first heterostructure layer disposed onthe highly doped bottom source-drain layer; a channel layer disposed onthe recessed first heterostructure layer; a recessed secondheterostructure layer disposed on the channel layer; a first dielectricinner spacer disposed between the dielectric bottom outer spacer and therecessed first heterostructure layer; a fin including the recessed firstand the second heterostructure layers and the channel layer; a high-kdielectric layer disposed on the dielectric bottom outer spacer and thechannel layer; a metal gate layer disposed on top of the high-kdielectric layer; a dielectric top outer spacer disposed on top of thehigh-k dielectric layer and the metal gate layer; a second dielectricinner spacer disposed between the dielectric top outer spacer and therecessed second heterostructure layer; and a top source-drain epitaxiallayer of a second type disposed on the first fin and the dielectric topinner spacer and the dielectric top outer spacer.
 2. The vertical FETstructure of claim 1, wherein the first dielectric inner spacercomprises silicon-boron-carbon-nitride (SiBCN).
 3. The vertical FETstructure of claim 1, wherein the second dielectric inner spacercomprises silicon-boron-carbon-nitride (SiBCN).
 4. The vertical FETstructure of claim 1, further comprising a first contact disposed on thetop source-drain epitaxial layer.
 5. The vertical FET structure of claim1, further comprising a second contact disposed on the bottomsource-drain layer.
 6. The vertical FET structure in claim 1, furthercomprising an interlayer dielectric oxide between the first contact andthe second contact.
 7. The vertical FET structure of claim 1, whereinthe recessed first heterostructure layer comprises silicon germanium. 8.The vertical FET structure of claim 1, wherein the recessed secondheterostructure layer comprises silicon germanium.
 9. The vertical FETstructure of claim 1, wherein the channel layer has a thickness ofbetween 3 nm to 10 nm.
 10. The vertical FET structure of claim 1,wherein the dielectric bottom outer spacer has a thickness of between 5nm to 15 nm.
 11. A vertical field-effect transistor (FET) structurecomprising: a substrate of a first type; a highly doped bottomsource-drain layer disposed on the substrate of the first type; adielectric bottom outer spacer disposed on the highly doped bottomsource-drain layer; a recessed first heterostructure layer disposed onthe highly doped bottom source-drain layer; a channel layer disposed onthe recessed first heterostructure layer; a recessed secondheterostructure layer disposed on the channel layer; a first dielectricinner spacer disposed between the dielectric bottom outer spacer and therecessed first heterostructure layer; a fin including the recessed firstand the second heterostructure layers and the channel layer; a high-kdielectric layer disposed on the bottom outer spacer and the channellayer; a dielectric top outer spacer disposed on top of the high-kdielectric layer; a second dielectric inner spacer disposed between thedielectric top outer spacer and the recessed second heterostructurelayer; a metal gate layer disposed on top of the high-k dielectric layerand directionally recessed below the second dielectric inner spacer; anda top source-drain epitaxial layer of a second type disposed on thefirst fin, the dielectric top inner spacer, and the dielectric top outerspacer.
 12. The vertical FET structure of claim 11, wherein the firstdielectric inner spacer comprises silicon-boron-carbon-nitride (SiBCN).13. The vertical FET structure of claim 11, wherein the seconddielectric inner spacer comprises silicon-boron-carbon-nitride (SiBCN).14. The vertical FET structure of claim 11, further comprising a firstcontact disposed on the top source-drain epitaxial layer.
 15. Thevertical FET structure of claim 11, further comprising a second contactdisposed on the bottom source-drain layer.
 16. The vertical FETstructure in claim 11, further comprising an interlayer dielectric oxidebetween the first contact and the second contact.
 17. The vertical FETstructure of claim 11, wherein the recessed first heterostructure layercomprises silicon germanium.
 18. The vertical FET structure of claim 11,wherein the recessed second heterostructure layer comprises silicongermanium.
 19. The vertical FET structure of claim 11, wherein thechannel layer has a thickness of between 3 nm to 10 nm.
 20. The verticalFET structure of claim 11, wherein the dielectric bottom outer spacerhas a thickness of between 5 nm to 15 nm.